Inspecting device and probe card

ABSTRACT

An object of the present invention is to provide an inspecting device equipped with a probe card capable of inspecting an object to be inspected appropriately even at heating or cooling time. The inspecting device of the present invention is an inspecting device equipped with a performance substrate provided with a terminal for inspection; a contactor substrate provided with a probe contacting an object to be inspected; and a probe card intervening between the probe of conductor substrate and a terminal of performance substrate, wherein the probe card is a multi-layered substrate in which a resin thin film is laminated on a ceramic board.

TECHNICAL FIELD

[0001] The present invention relates to an inspecting device equippedwith a probe for judging whether or not a conductor circuit formed on asilicon wafer and the like is formed as designed, and a probe card.

BACKGROUND ART

[0002] Integrated circuits formed on a silicon wafer are inspected bypressing a probe against an inspection portion of the silicon wafer,sending electric current thereto and examining the conductivity thereof,the insulation thereof and the like. At present, with an enhancement ofintegration degree of a semiconductor chip, the integration degree ofconductor circuits formed on the silicon wafer also is enhanced and thepitch to be inspected with probes becomes narrower. As a result, it hasbeen becoming difficult to attach the probes directly to a head(performance substrate) of an inspecting device.

[0003] In order to cope with such a problem, a trunk substrate (probecard) is interposed therebetween and a contact or substrate on whichprobes are arranged is fitted to the head (performance substrate). Thisprobe card (trunk substrate) comprises a multi-layered resin substrate,and causes wide-pitch terminals of the performance substrate and theprobes, which have a narrow pitch, of the contactor substrate to beconnected to each other through the probe card.

SUMMARY OF THE INVENTION

[0004] At present, the test on temperature properties of the conductorcircuit is conducted in a state of a silicon wafer. That is, a siliconwafer wherein conductor circuits are formed is cooled to minus severaltens of centigrade degrees. In this state, the low-temperatureperformance thereof is tested. Also, a silicon wafer wherein conductorcircuits are formed is heated up to one hundred and several tens ofcentigrade degrees. In this state, the high-temperature performancethereof is tested. However, for instance, in the case of using a probecard made only of a resin in which conductor circuits are formed or aprobe card made of an alumina ceramic board, the tips of probes get outof position from sites to be inspected and cannot contact the sites uponsuch heating/cooling time. Thus, it happens that the silicon wafer isjudged to be out of order.

[0005] The present invention has been made to solve the above-mentionedproblem. An object thereof is to provide an inspecting device equippedwith a probe card capable of inspecting an object to be inspected evenupon the time of heating/cooling, and a probe card used in thisinspecting device.

[0006] The inspecting device of the present invention for attaining theabove-mentioned object is an inspecting device equipped with aperformance substrate provided with a terminal for inspection; acontactor substrate provided with a probe contacting an object to beinspected; and a probe card intervening between the probe of thecontactor substrate and a terminal of the performance substrate,

[0007] wherein the probe card is a multi-layered substrate in which aresin thin film is laminated on a ceramic board.

[0008] Since the probe card in the inspecting device of the presentinvention is a multi-layered substrate in which a resin thin film islaminated on a ceramic board, the thermal expansion coefficient of theentire probe card becomes close to the thermal expansion coefficient ofthe ceramic board and is substantially equal to the thermal expansioncoefficient of a silicon wafer. For this reason, the probe cardcontracts thermally at a ratio similar to that of the silicon wafer atthe time of heating/cooling the silicon wafer. Therefore, the probe doesnot get out of position from a site to be inspected of the siliconwafer. Thus, appropriate inspection can be carried out.

[0009] In the above-mentioned inspecting device, the ceramic board ofthe above-mentioned probe card preferably comprises non-oxide ceramic.

[0010] In the case that the ceramic board of the probe card comprisesnon-oxide ceramic, the ceramic board has high thermal conductivity andfollows a change in temperature of a silicon wafer. Thus, the ceramicboard can be thermally contracted together with the silicon wafer.

[0011] In the above-mentioned inspecting device, the resin thin filmpreferably comprises thermosetting resin.

[0012] In the case that the resin thin film comprises thermosettingresin, the surface of the probe card can be caused to have hightoughness.

[0013] The probe card of the present invention is a probe card for theuse of an inspecting device for judging whether a conductor circuitformed on a silicon wafer is acceptable or defective,

[0014] wherein a resin thin film and a conductor circuit are seriallyformed in alternate fashion and in repetition on a ceramic board havinga conductor-filled through hole and the resultant conductor circuits areinterconnected each other by a via hole.

[0015] In the above-mentioned probe card, the resin thin film and theconductor circuit are formed on the ceramic board having high strength;therefore, the thermal expansion coefficients of the resin thin film andthe conductor circuits are dominated by the thermal expansioncoefficient of the ceramic board to become substantially equal to thethermal expansion coefficient of the ceramic board and thus becomesubstantially equal to the thermal expansion coefficient of a siliconwafer.

[0016] For this reason, the probe card also expands and contractsthermally at the same ratio as the silicon wafer does when the siliconwafer is heated/cooled. Therefore, poor connection is not caused, forexample, at the portion where the probe of the contactor substrate andthe conductor circuit exposed from the resin layer surface of the probecard contact each other. Thus, the conductor circuit formed on thesilicon wafer can be appropriately inspected.

[0017] In the above-mentioned probe card, the ceramic board preferablycomprises nitride ceramic. The resin thin film preferably comprisesthermosetting resin, particularly polyimide.

[0018] This is because nitride ceramic, particularly aluminum nitride,has high thermal conductivity and follows a change in the temperature ofa silicon wafer, and polyimide causes the surface of the probe card tohave high toughness.

BRIEF DESCRIPTION OF DRAWINGS

[0019]FIG. 1 is an explanatory view illustrating a first embodiment in afirst inspecting device of the present invention.

[0020]FIG. 2 is a sectional view of a probe substrate, a probe card anda contactor substrate.

[0021]FIG. 3 is an enlarged sectional view of the probe substrate, theprobe card and the contactor substrate.

[0022]FIG. 4 is an enlarged sectional view of the probe substrate, theprobe card and the contactor substrate.

[0023]FIG. 5 is an enlarged sectional view of a probe substrate, a probecard and a contactor substrate according to a modified example of thefirst embodiment in the above-mentioned first inspecting device.

[0024]FIG. 6 is an enlarged sectional view of a probe substrate, a probecard and a contactor substrate according to a modified example of asecond embodiment in the first inspecting device of the presentinvention.

[0025]FIG. 7 is an explanatory view illustrating an embodiment in thesecond inspecting device of the present invention.

[0026] FIGS. 8(a) to (e) are sectional views illustrating some parts ofthe manufacturing process of a probe card of the present invention.

EXPLANATION OF SYMBOLS

[0027]10 inspecting device

[0028]20 tester

[0029]24 performance substrate

[0030]30 probe

[0031]40 probe card

[0032]41 conductor-filled through hole

[0033]42 ceramic board

[0034]43 terminal pad

[0035]44, 144, 244 interlaminar resin insulating layer

[0036]46, 146, 146 via hole

[0037]48, 148, 248 conductor circuit

[0038]50 contactor substrate

[0039]52 probe

[0040]60 silicon wafer

[0041]62 pad

DETAILED DISCLOSURE OF THE INVENTION

[0042] First, the inspecting device of the present invention will bedescribed.

[0043] The inspecting device of the present invention is an inspectingdevice equipped with:

[0044] a performance substrate provided with a terminal for inspection;

[0045] a contactor substrate provided with a probe contacting an objectto be inspected; and

[0046] a probe card,

[0047] wherein the probe card is a multi-layered substrate in which aresin thin film is laminated on a ceramic board.

[0048] This inspecting device can be classified into two kinds ofinspecting devices. They are the same in that a probe card is amulti-layered substrate in which a resin thin film is laminated on aceramic board but are different in the manner of arranging an object tobe inspected.

[0049] That is, the first inspecting device of the present invention is,as illustrated in FIG. 2, an inspecting device equipped with: aperformance substrate provided with a terminal for inspection; acontactor substrate provided with a probe contacting an object to beinspected; and a probe card intervening between the probe of thecontactor substrate and a terminal of the performance substrate.

[0050] The second inspecting device of the present invention is, asillustrated in FIG. 7, an inspecting device equipped with: a performancesubstrate provided with a terminal for inspection; a contactor substrateprovided with a probe contacting an object to be inspected; and a probecard electrically connected to the probe of the contactor substrate, theinspecting device being constituted such that the object to be inspectedis placed between the performance substrate and the probe card.

[0051] Referring to the drawings, the first inspecting device of thepresent invention will first be described.

[0052]FIG. 1 is a sectional view schematically illustrating a firstembodiment in the first inspecting device. An inspecting device 10 isequipped with a table 26 on which a silicone wafer 60 is placed, andwhich adjust the position of the wafer in X, Y and Z directions, aperformance substrate 24 provided with inspecting terminals, anelevating equipment 22 for adjusting the position of the performancesubstrate 24 in X, Y and Z directions, and a tester 20 for applyingelectric current through the performance substrate 24 to a silicon wafer60 to judge whether the silicon wafer 60 is acceptable or not. Below thetable 26 are arranged a heater 28 for heating the silicon wafer 26 up to150° C. and a cooling device 29 using a Peltier mechanism for coolingthe wafer to −50° C. Electric power is supplied from a non-illustratedpower source to the heater 28.

[0053]FIG. 2 is an explanatory view illustrating an enlarged vicinity ofthe performance substrate 24. The performance substrate 24 is provided,through a probe substrate 30 and a probe card 40 which are successivelyarranged below it, with a contactor substrate 50 having a probe 52 whichdirectly contacts the silicon wafer 60. Sections of the probe substrate30, the probe card 40 and the contactor substrate 50 are shown in FIG.3, and an enlarged portion of the probe card 40 is shown in FIG. 4.

[0054] The probe substrate 30 which connects the performance substrate24 and the probe card 40 to each other is made of a machinable ceramicin which through holes 30 a are made. Each of the through holes 30 a isprovided with a metal probe 32 for connecting a terminal 25 of theperformance substrate 24 and a conductor-filled through hole 41 in theprobe card 40 to each other.

[0055] As illustrated in FIG. 4, the probe card 40 comprises: a ceramicboard 42 in which conductor-filled through holes 41 are formed; andinterlaminar resin insulating layers (resin thin films) 44, 144 and 244in which via holes 46, 146 and 246 and conductor circuits 48, 148 and248 are formed. A resin layer 49 as an outermost layer, the resin thinfilms 44, 144 and 244 desirably are made of at least one selected frompolyimide resin, epoxy resin, bismaleimide-triazine resin,benzocyclobutene, olefin resin, and Teflon resin.

[0056] The conductor circuit on the outermost surface may be coveredwith resin.

[0057] The conductor-filled through hole 41 formed inside the ceramicboard 42 is connected to the via hole 46 formed in the interlaminarresin insulating layer 44, and the via hole 46 is connected through theconductor circuit 48 to the via hole 146 formed in the interlaminarresin insulating layer 144. Similarly, the via hole 146 is connectedthrough the conductor circuit 148 to the via hole 246 formed in theinterlaminar resin insulating layer 244.

[0058] A part of the conductor circuit 248 connected to the via hole 246is exposed, and the upper end of the probe 52 of the contactor substrate50 contacts the exposed conductor circuit 248 so that the terminal 25 ofthe performance substrate 24 and the probe 52 of the contactor substrate50 are connected to each other through the probe card.

[0059] The thickness of the ceramic board 42 is 4 mm, and theconductor-filled through holes 41, which have a size of 60-μm sauare,are formed to be matched with the arrangement pitch P1 (800 μm) of theterminals 25 of the performance substrate 24.

[0060] Each of the interlaminar resin insulating layers 44, 144 and 244is formed to have a thickness of 10 μm.

[0061] The contactor substrate 50 is made of a machinable ceramic havinga thickness of 4 mm, in which through holes 50 a having a diameter of100 μm are made. The probes 52 having a diameter of 100 μm are insertedinto the through holes 50 a. The probes 52 are arranged to be matchedwith the pitch P2 (80 μm) of the inspecting pads 62 of the silicon wafer60. The probe 52 comprises an outer probe 52A, the inside of which isformed in a cylindrical form, and an inner probe 52B. The inner probe52B is arranged slidably inside the outer probe 52A, and is urged tomove downwards (toward the silicon wafer 60) by a spring 52C.

[0062] By setting the stretching/shrinking mechanisms inside the probes52, the inner probes 52B can be moved up and down and can beappropriately brought in contact with the pads 62 whose heights have ascattering. The probe substrate 30, the probe card 40 and the contactorsubstrate 50 are integrated with and fixed to the performance substrate24 by means of a non-illustrated tool.

[0063] The following will describe inspection of the silicon wafer 60with the first inspecting device 10 of the present invention, referringto FIGS. 1 and 4.

[0064] The silicon wafer 60 is first placed on the table 26, and apositioning mark formed on the silicon wafer is read by anon-illustrated optical device in order to adjust the position of thetable 26. Thereafter, the performance substrate 24 is pressed down bythe elevating equipment 22 to press the probes 52 of the contactorsubstrate 50 against the given pads 62 of the silicon wafer 60. In FIG.4, the pads are drawn like heaps for convenience to illustrate sites tobe measured of the silicon wafer 60. However, it should be noted that inan actual silicon wafer the pads 62 are mere specific sites on formedcircuits and are not particularly heaped up.

[0065] Next, the tester 20 supplies electric current through theperformance substrate 24, the probe substrate 30, the probe card 40 andthe contactor substrate 50, to desired one selected from the pads 60 onthe silicon wafer 60 to perform the following test at ambienttemperature: property tests, for example, as to whether the givenconductor circuit is conductive or not, and as to whether a portion atwhich insulation is required is insulated or not.

[0066] Subsequently, cooling is started by the cooling device 29, andthe silicon wafer 60 is cooled to −50° C. At this time, the contactorsubstrate 50 made of the machinable ceramic and the ceramic board 42 ofthe probe card have high thermal conductivity; thus, the temperaturethereof follows the change in the temperature of the silicon wafer sothat they are cooled to −50° C. Incidentally, the thermal expansioncoefficient of the contactor substrate 50 made of the machinable ceramicis close to that of silicon constituting the silicon wafer, and theceramic board 42 constituting the probe card 40 is made of aluminumnitride, the thermal expansion coefficient of which is close to that ofsilicon. In the cooling test, therefore, the contactor substrate 50 andthe probe card 40 contract to a degree similar to the contraction of thesilicon wafer. For this reason, the pads 62 of the silicon wafer, thepads 52 of the contactor substrate 50, and the conductor circuits 248 ofthe probe card 40 do not get out of position, so that the test can beappropriately performed.

[0067] Next, electric current is sent to the heater 28, to heat thesilicon wafer 60 up to 150° C. At this time, the contactor substrate 50and the probe card 40 are also heated to about 150°C. Thus, thecontactor substrate 50 and the probe card 40 expand to a degree similarto the contraction of the silicon wafer. Thus, the pads 62 of thesilicon wafer, the pads 52 of the contactor substrate 50, and theconductor circuits 248 of the probe card 40 do not get out of position,so that the test can be appropriately performed. Since the interlaminarresin insulating layers 44, 144 and 244 of the probe card 40 are made ofpolyimide, they can keep high toughness even in a high-temperature test.

[0068] To the probe card 40, the interlaminar resin insulating layers44, 144 and 244, which have a relatively large thermal expansioncoefficient, are formed. However, the thickness of each of theinterlaminar resin insulating layers is 10 μm and the total thickness ofthe four layers is 40 μm, whereas the thickness of the ceramic board 42is 4 mm. Accordingly, the probe card 40 contracts and expands accordingto thermal contraction and thermal expansion of the ceramic board 42.

[0069] The following will describe a modified example of theabove-mentioned first embodiment, referring to FIG. 5.

[0070] As described with reference with FIG. 4, in the contactorsubstrate 50, the probes 52 having therein the stretching/shrinkingmechanisms are used as probes in order to perform inspection at a pitchof 80 μm.

[0071] On the other hand, in this modified example, pads 62 of a siliconwafer 60 are inspected at a pitch of 60 μm. As shown in FIG. 5,therefore, in this modified example, through holes (diameter: 25 μm) 150a are formed in a contactor substrate 150 to have a pitch of 60 μm.Probes 152 having a diameter of 20 μm are slidably inserted and fixedinto the through holes 150 a. That is, in this modified example, ascattering in the heights of the pads 62 can be absorbed by supportingthe probes 152 slidably in the up-and-down direction.

[0072] The following will describe a second embodiment in the firstinspecting device of the present invention, referring to FIG. 6.

[0073] The inspecting device according to the second embodiment has astructure similar to the inspecting device of the first embodimentdescribed with reference to FIG. 1. In the second embodiment, however,the contactor substrate 150 is attached to only some parts of the probecard 40, that is, portions where the pads 62 are formed on the siliconwafer 60 at a very fine pitch. Electrically conductive pins (probes) 134are attached directly to portions where the pads 62 are formed on thesilicon wafer 60 at a larger ditch. The second embodiment has anadvantage that the inspecting device can be produced at low costs.

[0074] The first and second embodiments are examples wherein theinspecting device of the present invention is used to inspect conductorcircuits formed on a silicon wafer. Needless to say, the inspectingdevice of the present invention can be used to inspect an object to beinspected wherein a ceramic such as silicon is used, for instance, asemiconductor chip and the like.

[0075]FIG. 7 is a sectional view schematically illustrating a secondinspecting device of the present invention. In the inspecting device ofthe present invention, its members may be arranged as illustrated inFIG. 7.

[0076] That is, in this inspecting device, a performance substrate 24formed to have a size larger than a silicon wafer is arranged at thelowest side and a silicon wafer 60 is placed on the central portion ofthis performance substrate 24.

[0077] On the silicon wafer 60 is arranged a contactor substrate 50having probes 52 for contacting the silicon wafer 60, and further aprobe card 40 is arranged on the contactor substrate 50, so that thesilicon wafer 60 and the probe card 40 are connected through thecontactor substrate 50 to each other.

[0078] A probe substrate 30 is arranged around the silicon wafer 60 tocause the performance substrate 24 and the probe card 40 to be connectedto each other. This probe substrate 30 is desirably formed to be in aring form so as to have a constitution that the silicon wafer 60, whichis an object to be inspected, and the contactor substrate 50 can bearranged inside the probe substrate 30.

[0079] As described above, in the second inspecting device of thepresent invention, the silicon wafer 60, which is an object to beinspected, and the contactor substrate 50 are arranged between the probecard 40 and the performance substrate 24.

[0080] In this inspecting device, the probe card 40 is set above theprobe substrate 30 and the contact or substrate 50. Therefore, in theperiphery thereof, pads for connecting to the performance substrate 24through the probe substrate 30 are formed and, in the inner portionthereof, pads for connecting to the contactor substrate 50 are formed.The probe card 40 is desirably in a disc form.

[0081] Since this probe card 40 is set above the probe card 30 and thecontactor substrate 50, the probe card 40 can contact, with only onemain surface thereof, terminals of the probe substrate 30 and thecontactor substrate 50. Thus, no conductor-filled through hole isnecessary.

[0082] The following will describe the probe card of the presentinvention.

[0083] The probe card of the present invention is a probe card for theuse of an inspecting device for judging whether a conductor circuitformed on a silicon wafer is acceptable or defective,

[0084] wherein: a resin layer and the conductor circuit are seriallyformed in alternate fashion and in repetition on a ceramic board havinga conductor-filled through hole; and the resultant conductor circuitsare interconnected each other by a via hole.

[0085] As described above, the probe card of the present invention is aprobe card for the use of an inspecting device for judging whether aconductor circuit formed on a silicon wafer is acceptable or defective.If this inspecting device is used for the above purpose, theconstitution thereof is not particularly limited. An example thereof isthe constitution described in the above-mentioned inspecting device.

[0086] As described above, in this probe card, a resin layer and aconductor circuit are serially formed in alternate fashion and inrepetition on a ceramic board. Therefore, the positional slippage ofprobes and pads of the probe card is less likely to be caused by thermalexpansion/contraction than in the case in which a probe card is madeonly of resin.

[0087] The resin layer has a lower dielectric constant than ceramics anddoes not cause a transmission delay of high-frequency signals, so thatthe resin layer makes tests using high-frequency signals possible. Sincethe resin layer gives toughness, the ceramic or the conductor circuit isnot damaged even when the probe card is pressed against it.

[0088] Furthermore, by forming ground layers (conductor circuits in amesh form or a plane form) as layers above and beneath the conductorcircuit which constitutes a signal layer, the impedance matching of thesignal layer can easily be attained. Thus, measurement can be made evenin the band of high frequencies of 1 GHz or more.

[0089] Furthermore, the number of the pads can be increased, by usingthe resin layer to make the probe card into a multi-layered one.

[0090] In this probe card, the resin layer is desirably formed to coverthe whole of at least one of the main faces of the ceramic board. Forexample, in JP Kokai Hei 6-140484, a resin layer is formed in portionsother than the periphery of a ceramic board. In such a form, the ceramicboard is distorted or cracked at the boundary between the portion wherethe resin layer is formed and the portion where the resin layer is notformed, upon heating or cooling. Therefore, measurement testsaccompanied by heating or cooling cannot be performed.

[0091] In the ceramic board, a conductor-filled through hole may beformed.

[0092] As illustrated in FIG. 2, the probe card is allowed to be in aconstruction of an inspecting device by making conductor-filled throughholes. Consequently, the area of the probe card can be made smaller thanthat of a silicon wafer, and integrated circuits formed on the siliconwafer can be tested in each of their sections.

[0093] The ceramic material of the ceramic board is not particularlylimited. Examples thereof include carbide ceramics, nitride ceramics,oxide ceramics and the like.

[0094] Examples of the carbide ceramics include silicon carbide,zirconium carbide, titanium carbide, tantalum carbide, tungsten carbideand the like.

[0095] Examples of the nitride ceramics include aluminum nitride,silicon nitride, boron nitride, titanium nitride and the like.

[0096] Examples of the oxide ceramics include alumina, silica, zirconia,cordierite and the like.

[0097] Among these ceramics, non-oxide ceramics such as nitride ceramicsand carbide ceramics and the like are preferred. Among these ceramics,nitride ceramics are more preferred. Aluminum nitride is particularlypreferred. This is because they have a high thermal conductivity and hasan excellent temperature following property as a ceramic board.

[0098] The above-mentioned ceramic board may comprise a sintering aid.Examples of the sintering aid include alkali metal oxides, alkali earthmetal oxides, rare element oxides and the like. CaO, Y₂O₃, Na₂O, Li₂Oand Rb₂O are preferred among these sintering aids. The content of thesesintering aids is desirably from 0.1 to 20% by weight. Alumina may becontained as well.

[0099] The above-mentioned non-oxide ceramic may contains 5% or less byweight of oxygen. If the oxygen amount is about 5% by weight, sinteringis promoted and an adequate breakdown voltage can be ensured. Moreover,a warp amount at high temperature can be made small.

[0100] The amount of an α-ray radiated from the surface of the non-oxideceramic is desirably 50 c/cm²·hour or less, and is optimally 2.0c/cm²·hour or less. This is because if the amount is more than 50c/cm²·hour, the so-called software error is generated so that a mistakeis caused in inspection.

[0101] In the ceramic board, its surface roughness Rmax based on JIS B0601 is desirably: 0.01 μm<Rmax<100 μm. Its Ra is desirably: 0.001<Ra<10μm.

[0102] In the ceramic board, its surface roughness is optimally: Ra=0.01to 10 μm according to JIS B 0601. This is because a larger surfaceroughness is preferable in light of adhesion of the surface to theconductor circuit; however, an excessively large surface roughness makesmeasurement using high frequencies difficult by skin effect (signalcurrent having a high frequency flows locally in the surface of theconductor circuit), and further a small surface roughness causes aproblem about the adhesion.

[0103] The shape of the ceramic board is not particularly limited.Preferably, the shape is a rectangular solid shape (rectangular shape inplan view), a polygonal column shape, a disc shape and the like. Thelength of its diameter or longest diagonal line is preferably from 10 to500 mm.

[0104] The thickness of the ceramic board is preferably 50 mm or less,and more preferably 10 mm or less. This is because if the thickness ofthe ceramic board is too thick, the device cannot be made small-sizedand further its heat capacity becomes large so thattemperature-rising/dropping speed drops and temperature-matchingproperty deteriorates. By making the thickness of the ceramic boardthin, the electric resistance of the probe card can be made small sothat erroneous decision can be prevented from being generated.

[0105] The flatness of the ceramic board is preferably 500 μm or lesswhen the distance measured is (the diameter−10 mm) or (the longestdiagonal line length−10 mm). This is because if the flatness is morethan 500 μm, no warp can be corrected even by pressing upon measurement.

[0106] The thermal conductivity κ of the ceramic board is preferably 10W/m·k<κ<300 W/m·k, and more preferably from 160 to 220 W/m·k.

[0107] This is because by making the thermal conductivity high, thetemperature-rising/dropping speed becomes large so that the temperatureof the ceramic board rapidly becomes equivalent to that of an object tobe measured, such as a silicon wafer, and the slippage thereof from theprobes of the contactor substrate can be prevented.

[0108] The volume resistivity ρ of the ceramic board is desirably 10¹³Ω·cm<ρ<10¹⁶ Ω·cm. This is because the generation of leakage current athigh temperature and dielectric breakdown between the conductor-filledthrough holes are prevented.

[0109] The Young's module E of the ceramic board is desirably 60GPa<E<450 GPa at 25 to 600° C. This is because the ceramic board isprevented from being warped at high temperature.

[0110] The bending strength σ_(f) of the ceramic board is desirably 200MPa<σ_(f)<500 MPa at 25 to 600° C. This is because the ceramic board isprevented from being damaged when the ceramic board is pressed. When theceramic board is pressed, a pressure of about 0.1 to 10 kg/cm² isapplied to the ceramic board.

[0111] The porosity of the ceramic board is desirably 5% or less. Thepore diameter of the maximum pore is desirably 50 μm or less. This isbecause an adequate breakdown voltage can be ensured at a temperature of100° C. or more, large mechanical strength can be obtained, and the warpamount of the ceramic board upon being pressed can be made small.

[0112] Additionally, the thermal conductivity becomes high andtemperature-rising/dropping is rapidly attained, thereby causingexcellent temperature-matching.

[0113] About the maximum pore, ten arbitrary positions are photographedwith an electron microscope, the largest pore is selected in each visualfield, and the average value of the maximum pore diameters thereof isdefined as the pore diameter of the maximum pore. The porosity may be0%. The matter that no pores are present is ideal.

[0114] If the porosity is more than 50 μm, it becomes difficult toensure a high breakdown voltage property particularly at hightemperature so that a short circuit and the like may be caused.

[0115] The pore diameter of the maximum pore is desirably 10 μm or less.This is because the warp amount becomes small at high temperature (forexample, 100° C. or more).

[0116] The porosity is measured by Archimedes' method. This is a methodof crushing a sintered body to pieces, putting the pieces into anorganic solvent or mercury to measure the volume thereof, obtaining thetrue specific gravity or the pieces from the weight and the volumethereof, and calculating the porosity from the true specific gravity andapparent specific gravity.

[0117] The porosity and the pore diameter of the maximum pore areadjusted by pressing time, pressure and temperature at the time ofsintering, or additives such as SiC and BN. Since SiC or BN obstructssintering as described above, pores can be produced. When pores arepresent, the toughness value rises. Therefore, pores may be present tosuch a degree that the strength does not drop very much.

[0118] When pores are present inside the ceramic board, the pores arepreferably closed pores. The quantity of helium (helium leakagequantity) passing through the ceramic board is desirably 10⁻⁷ Pa·m³/sec.or less. This is because by making the ceramic board which has smallvalue of the helium leakage-quantity and which is fine and condenced,conductor-filled through holes made inside can be prevented from beingcorroded by oxygen and so on in the air.

[0119] A scattering in the thickness of the ceramic board is preferablywithin ±3%. This is because it is necessary that the surface of theceramic board is flat in order that poor contact between the ceramicboard and the probes of the contactor substrate is not caused.

[0120] A scattering in the thermal conductivity is preferably within±10%. This is because warp and so on, resulting from unevenness in thetemperature can be prevented.

[0121] The brightness of the ceramic board is desirably N6 or less as avalue based on the rule of JIS Z 8721. The ceramic board having such abrightness has concealing property to have good external appearance, andfurther has a large radiant heat capacity so that the temperature of theceramic board rises rapidly.

[0122] The brightness N is defined as follows: the brightness of idealblack is made to 0; that of ideal white is made to 10; respective colorsare divided into 10 parts in the manner that the brightness of therespective colors is recognized stepwise between the brightness of blackand that of white at equal intensity intervals; and the resultant partsare indicated by symbols N0 to N10, respectively.

[0123] Actual brightness is measured by comparison with color chipscorresponding to N0 to N10. One place of decimals in this case is madeto 0 or 5.

[0124] The ceramic board having such properties can be obtained byincorporating 100 to 5000 ppm of carbon into the ceramic board. Carbonis classified into amorphous carbon and crystalline carbon. Theamorphous carbon makes it possible to suppress a drop in the volumeresistivity of the ceramic board at high temperature, and thecrystalline carbon makes it possible to suppress a drop in the thermalconductivity of the ceramic board at high temperature. Therefore, thekind of carbon can be appropriately selected dependently on the purposeof the substrate to be manufactured, and so on.

[0125] The amorphous carbon can be obtained by firing, for example, ahydrocarbon made only of C, H and O, preferably a saccharide in the air.As the crystalline carbon, graphite powder and the like can be used.

[0126] Carbon can be obtained by decomposing an acrylic resin thermallyin an inert atmosphere and then heating and pressing the resin. Bychanging the acid value of this acrylic resin, the degree ofcrystallinity (amorphousness) can also be adjusted.

[0127] The probe card of the present invention is usually constituted inthe same manner as the probe cards illustrated in FIGS. 3 to 6, andconductor-filled through holes are made inside their ceramic board. Theconductor-filled through holes are made of a high melting point metalsuch tungsten or molybdenum, or a electrically conductive ceramic suchas tungsten carbide or molybdenum carbide.

[0128] The diameter of the conductor-filled through holes is desirablyfrom 0.1 to 10 mm. This is because disconnection is prevented andfurther cracks and strain can be prevented. The shape of theconductor-filled through holes is not particularly limited. Examplesthereof include a circular column shape, rectangular column shapes (suchas a square column and a circular column) and the like.

[0129] In the probe card of the present invention, a conductor circuitfor enlarging the pitch of wirings may be formed inside the ceramicboard or on the surface thereof so as to be in parallel to main faces ofthe ceramic board. A terminal pad for connection to the probe 32 of theprobe substrate may be formed. By forming the conductor circuit, theenlargement degree of the pitch in the resin layer can be made small andthe formation of the conductor circuit becomes easy. The conductorcircuit may be formed only on one main face of the probe card. Theconductor circuit or the terminal pad preferably comprises a highmelting point metal such tungsten, molybdenum and the like or aelectrically conductive ceramic such as tungsten carbide, molybdenumcarbide and the like.

[0130] The case may be, however, this conductor layer may be made of anoble metal such as gold, solver, platinum and the like, or a metal suchas nickel and the like.

[0131] The area resistivity of the conductor-filled through holes, theconductor circuit, the terminal pad and the like is preferably from 1 to50 μΩ/□.

[0132] If the area resistivity is more than 50 μΩ/□, theconductor-filled through holes and the like may generate heat or theinspecting device may make an erroneous decision by a drop in voltageand the like.

[0133] In order to form the conductor-filled through holes or theconductor circuits on the surface of the ceramic board or inside it, itis preferable to use a conductor containing paste. comprising a metal ora electrically conductive ceramic.

[0134] In other words, in the case that the conductor-filled throughholes or the conductor circuits are formed inside the ceramic board,through holes made in a green sheet are filled with a conductorcontaining paste or a conductor containing paste layer is formed on agreen sheet; thereafter, such green sheets are laminated and fired,thereby forming the conductor-filled through holes or the conductorcircuits inside the ceramics substrate.

[0135] By forming a conductor containing paste layer on a green sheetwhich will be a topmost layer or a lowermost layer and then firing thislayer, the conductor circuits can be formed on the surface of theceramic board.

[0136] On the other hand, after the ceramic board is manufactured, byforming a conductor containing paste layer on the surface thereof andfiring this layer, the conductor circuits or the terminal pads can beformed.

[0137] The conductor containing paste is not particularly limited, andis preferably a paste comprising not only metal particles orelectrically conductive ceramic particles for keeping electricalconductivity but also a resin, a solvent, a thickener and so on.

[0138] The material of the metal particles or the electricallyconductive ceramic particles may be the same as described above. Theparticle diameter of these metal particles or electrically conductiveceramic particles is preferably from 0.1 to 100 μm. If the particlediameter is too fine, that is, less than 0.1 μm, they are easilyoxidized. On the other hand, if the particle diameter is over 100 μm,they are not easily sintered so that the resistance value becomes large.

[0139] The shape of the metal particles may be spherical or scaly. Whenthese metal particles are used, they may be a mixture of the sphericalparticles and the scaly particles.

[0140] In the case that the metal particles are scaly or a mixture ofspherical particles and scaly particles, metal oxides between the metalparticles are easily held and adhesion between the conductor circuitsetc. and the ceramic board is made sure. Thus, this case is profitable.

[0141] Examples of the resin used in the conductor containing pasteinclude epoxy resin, phenol resin and the like. Examples of the solventare isopropyl alcohol and the like. Examples of the thickener arecellulose and the like.

[0142] When the conductor containing paste layer is formed on thesurface of the ceramic board, it is preferable to add a metal oxidebesides the metal particles to the conductor containing paste and make asintered body of the metal particles and the metal oxide. By sinteringthe metal oxide together with the metal particles in this way, theceramic board can be more closely adhered to the metal particles, etc.

[0143] The reason why the adhesion to the ceramic board by mixing themetal oxide is improved is unclear, but would be based on the following.The surface of the metal particles, or the surface of the ceramic boardmade of the non-oxide is slightly oxidized so that an oxidized film isformed. Pieces of this oxidized film are sintered and integrated witheach other through the metal oxide so that the metal particles and theceramic are closely adhered to each other. In the case that the ceramicconstituting the ceramic board is an oxide, the surface is naturallymade of the oxide. Therefore, a conductor layer having superior adhesionis formed.

[0144] A preferred example of the above-mentioned metal oxide is atleast one selected from the group consisting of lead oxide, zinc oxide,silica, boron oxide (B₂O₃), alumina, yttria, and titania.

[0145] This is because these oxides make it possible to improve adhesionto the metal particles etc. and the ceramic board.

[0146] When the total amount of the metal oxides is set to 100 parts byweight, the weight ratio of lead oxide, zinc oxide, silica, boron oxide(B₂O₃), alumina, yttria and titania is as follows: lead oxide: 1 to 10,silica: 1 to 30, boron oxide: 5 to 50, zinc oxide: 20 to 70, alumina: 1to 10, yttria: 1 to 50 and titania: 1 to 50. The weight ratio ispreferably adjusted within the scope that the total thereof is not over100 parts by weight.

[0147] By adjusting the amounts of these oxides within these ranges,particularly adhesion to the ceramic board can be improved.

[0148] On the ceramic board having the above-mentioned constitution, aresin thin film (interlaminar resin insulating layer) and a conductorcircuit are serially formed in alternate fashion and in repetition.Layers in which the resultant conductor circuits are interconnected eachother by a via hole (hereinafter referred to as laminated resin layers)are formed.

[0149] The resin which constitutes the interlaminar resin insulatinglayer (resin thin film) is preferably a resin having excellent heatresistance. Examples of such a resin having excellent heat resistanceinclude epoxy resin, polyimide resin, bismaleimide resin, cardo typepolymer and the like. These are desirably sensitized. Also, epoxy resin,polyimide resin and so on are desirably sensitized. Considering easinessof the formation of a thin film, mechanical properties, and adhesion tothe ceramic board 42, cardo type polymer, polyimide resin and so on arepreferable.

[0150] The cardo type polymer is a general term of polymers having astructure wherein a cyclic group is directly bonded to its polymer mainchain. The cardo type polymer causes phenomena such asrotation-restriction of the polymer main chain, conformation-restrictionof the main chain and side chains, blocking of intermolecular packing,and an increase in aromaticity based on introduction of an aromaticsubstituent to the side chains, which result from the structure of thecardo type polymer, that is, the matter that a bulky substituent ispresent perpendicularly to the main chain. Therefore, the glasstransition temperature thereof is high after it is cured.

[0151] Also, in the cardo type polymer having such a structure, themoving ability of the main chain is suppressed because of its bulkysubstituent. Thus, even the cardo type polymer which is cured at lessthan 300° C. has a high crosslink density and a superior heatresistance. Moreover, the cardo type polymer has a superiorsolvent-solubility since the bulky substituent blocks close contact ofmolecular chains.

[0152] The cardo type polymer can be yielded by copolymerizing a cycliccompound having a carbonyl group (ketone, ester, acid anhydride, imideand the like) and an aromatic compound such as phenol or aniline, or aderivative thereof by condensation reaction.

[0153] The above-mentioned photosensitive cardo type polymer is a cardotype polymer having photosensitivity among the cardo type polymershaving the above-mentioned structure. A specific example thereof is aphotosensitive cardo type polyester yielded by copolymerizing a compoundrepresented by the following chemical formula (1):

[0154] and at least one selected from a compound represented by thefollowing general formula (2);

[0155] (In the formula, R¹ represents oxygen, a carbonyl group, atetrafluoroethylene group, or a single bond), pyromellitic dianhydride,terephthalic acid, and an acid chloride thereof.

[0156] Another example is a photosensitive cardo type polyimide yieldedby copolymerizing a compound represented by the above-mentioned generalformula (1) and at least one selected from a compound represented by thefollowing general formula (3);

[0157] (wherein R², R³, R⁴ and R⁵, which may be the same or different,each represents hydrogen, or a hydrocarbon group having 1 to 5 carbonatom(s), and R⁶ represents hydrogen, a carboxyl group, an alkoxycarbonylgroup having 2 to 8 carbon atoms), a compound represented by theabove-mentioned general formula (2), pyromellitic dianhydride,terephthalic acid, and an acid chloride thereof.

[0158] Among these compounds, the photosensitive cardo type polyimideresin is desirable. This is because even if this resin turns to a curedbody by curing at relatively low temperature, the glass transitiontemperature thereof is high.

[0159] The glass transition temperature of the cured photosensitivecardo type polvmer is desirably from 250 to 300° C. This is because:since any glass transition temperature within the above-mentioned rangecan be attained by curing the photosensitive cardo type polymer at acuring temperature of about 200° C., bad effects (such as softening ofthe resin substrate, dissolution thereof and the like) are not producedon the resin substrate when the interlaminar resin insulating layer isformed. Furthermore, the formed interlaminar resin insulating layer issuperior in shape-keeping capability and heat resistance.

[0160] In the case that the laminated resin layers are formed using sucha resin, for example, after application of a photosensitive polyimideresin to the manufactured ceramic board 42, through holes for via holes,which reach the conductor-filled through holes 41, are made by exposureand development treatment and then the polyimide resin is heated andcured.

[0161] Examples of the method of the application include spin coating,roll coater, dipping and curtain coater methods, and the like. The spincoating is preferable since a film having an even thickness can berelatively easily formed.

[0162] By forming the resin layer two times to form overlapping layers,the generation of pinholes can be more surely prevented. The via holesmay be made by radiation of a laser ray.

[0163] Before the resin layers are formed on the ceramic board, theconductor circuit may be formed on the surface of the ceramic board.This is because by forming the conductor circuit on the surface of theceramic board, the interval between the wirings formed on the other mainface can be made wide.

[0164] After the formation of the conductor circuit on the interlaminarresin insulating layer having the through holes for via holes, which areformed through the above-mentioned steps, etching and the like isperformed, thereby forming the via holes 46 and the conductor circuits48, as illustrated in, for example, FIG. 4.

[0165] The material of the conductor circuits 48 is not particularlylimited if the electric conductivity thereof is high. Examples thereofinclude copper, chromium, nickel, zinc, gold, silver, tin, iron and thelike. Among these metals, copper, which is relatively easily treatedwith plating or enables the formation of circuits having a high electricconductivity, is preferable.

[0166] Before the formation of the conductor layer on the interlaminarresin insulating layer, the surface of the interlaminar resin insulatinglayer is preferably subjected to modification treatment in order toensure adhesion between the interlaminar resin insulating layer and theconductor layer.

[0167] Examples of the method of modifying the interlaminar resininsulating layer include a method of using oxygen plasma to performplasma etching, and a method of using corona discharge and the like. Forexample, by performing plasma treatment, hydroxyl groups are formed onthe surface to improve the adhesion.

[0168] Thereafter, the conductor circuit is formed on the interlaminarresin insulating layer. At this time, a conductor layer in, so-called, aspread state is formed on the entire interlaminar resin insulating layerand subsequently an etching resist is formed thereon. Thereafter, theconductor circuit is formed by performing etching.

[0169] Examples of the method of forming such a conductor circuit in aspread state include plating methods such as electroless plating andelectroplating, sputtering, vapor deposition, CVD and the like. Amongthese methods, sputtering and plating are preferable. Sputtering andplating may be used together. This is because: the conductor layerhaving excellent adhesion can be formed on the surface of theinterlaminar resin insulating layer by sputtering; and the conductorlayer having a relatively large thickness can be formed byelectroplating.

[0170] By repeating the above-mentioned treatment plural times, theinterlaminar resin insulating layer and the conductor circuit areserially laminated and formed in repetition, laminated resin layerswherein the resultant conductor circuits are connected to each otherthrough the via holes can be formed.

[0171] By making through holes in the topmost resin layer, some parts ofthe conductor circuit are made exposed so as to enable contact with theprobes of the contactor substrate 50 arranged below it. The conductorcircuit may be made exposed without forming any resin layer on theconductor circuit, as it is.

[0172] On the basis of FIG. 8, the following will describe a process ofmanufacturing the probe card of the present invention. About themanufacture of the ceramic board constituting the above-mentioned probecard, other manufacturing processes thereof can be supposed. Thus, thepresent method, referred to herein, is called the manufacturing processA.

[0173] (1) Step of Forming Green Sheets

[0174] First, powder of a nitride ceramic or an oxide ceramic is mixedwith a binder, a solvent and so on to prepare a paste. This is used toproduce green sheets.

[0175] As the above-mentioned ceramic powder, aluminum nitride, and thelike can be used. If necessary, a sintering aid such as yttria may beadded. When the green sheets are produced, crystalline or amorphouscarbon may be added.

[0176] As the binder, desirable is at least one selected from an acrylicbinder, ethylcellulose, butyl cellosolve, and polyvinyl alcohol.

[0177] As the solvent, desirable is at least one selected fromα-terpineol and glycol.

[0178] A paste obtained by mixing these is formed into a sheet form bydoctor blade process, to produce green sheets 400.

[0179] The thickness of the green sheets 400 is preferably from 0.1 to 5mm.

[0180] Next, portions which will be through holes for constitutingconductor-filled through holes, and so on are formed in the resultantgreens sheet if necessary. After a green sheet lamination that will bedescribed later is formed, the above-mentioned processing may beperformed.

[0181] (2) Step of Printing a Conductor Containing Paste on the GreenSheets

[0182] A conductor containing paste is filled into the portions whichwill be conductor-filled through holes, to prepare filled layers 410. Ifnecessary, the above-mentioned conductor containing paste is used toform a conductor containing paste layer 420, which will be pads, onportions of the topmost green sheet, that is, where the filled layersfor conductor-filled through holes are formed. The layer which will bepads may be formed by sputtering and the like after producing a ceramicboard.

[0183] In the case that conductor circuits are formed inside, it is fineto form conductor containing paste layers on the green sheets which willbe inner layers.

[0184] These conductor containing pastes contain metal particles orelectrically conductive ceramic particles. Examples of the material ofthe metal particles include tungsten or molybdenum and the like, andexamples of the electrically conductive ceramic include tungsten carbideor molybdenum carbide.

[0185] The average particle diameter of tungsten particles or molybdenumparticles, which are the above-mentioned metal particle, is preferablyfrom 0.1 to 5 μm. This is because if the average particle is: less than0.1 μm; or more than 5 μm, the conductor containing paste is not easilyprinted.

[0186] Such a conductor containing paste may be a composition (paste)obtained by mixing, for example, 85 to 87 parts by weight of the metalparticles or the electrically conductive ceramic particles; 1.5 to 10parts by weight of at least one binder selected from acrylic binders,ethylcellulose, butyl cellosolve and polyvinyl alcohol; and 1.5 to 10parts by weight of at least one solvent selected from α-terpineol andglycol.

[0187] (3) Step of Laminating the Green Sheets

[0188] Next, the green sheets 400 are laminated, and are pressed to forma lamination (reference to FIG. 8(a)).

[0189] (4) Step of Firing the Green Sheet Lamination

[0190] Next, the green sheet lamination is heated and pressed to sinterthe green sheets 400 and the metals, etc. in the inner and outerconductor containing pastes. Thus, a ceramic board 42 havingconductor-filled through holes 41 etc. is manufactured.

[0191] Heating temperature is preferably from 1000 to 2000° C., andpressing pressure is preferably from 10 to 20 MPa. The heating isperformed in the atmosphere of an inert gas. As the inert gas, forexample, argon or nitrogen and the like can be used.

[0192] (5) Next, conductor layers are formed on both surfaces of theceramic board 42 obtained through the above-mentioned steps bysputtering, plating and the like method using a metal such as titanium,molybdenum, nickel, chromium and the like. Furthermore, an etchingresist is formed by photolithography. Next, some parts of the conductorlayers are dissolved by an etching solution, to strip the etchingresist. In this way, a conductor circuit 43 is formed (reference to FIG.8(b)). The thickness of the conductor circuit 43 is preferably from 1 to10 μm.

[0193] It is desirable to form a non-oxidizable metal layer (notillustrated) made of such as a nickel or noble metal (gold, platinum,silver or palladium) layer on the surface of the conductor circuit 43 onthe side where no resin layer is formed by electroless plating. Thethickness of the non-oxidizable metal layer is preferably from 1 to 10μm.

[0194] (6) An interlaminar resin insulating layer 44 is formed on atleast one of the surfaces (reference to FIG. 8(c)). The resin isdesirably a photosensitive resin. Among them, acrylated epoxy resin oracrylated polyimide resin is preferable. The interlaminar resininsulating layer 44 may be formed by laminating resin films orspin-coating liquid resin.

[0195] (7) After the formation of the resin layer, the resultant isheated and dried. Next, the resultant is exposed to light and developedto make openings. Furthermore, liquid resin is again spin-coated, andthen the resultant is heated and dried. Next, the resultant is exposedto light and developed, to make openings. The reason why the singleinterlaminar resin insulating layer 44 is formed by the operationsdivided into two is that even if pinholes are made in one of the resinlayers, insulation can be ensured by the other resin layer.

[0196] It is allowable to fill resin into spaces between the conductorcircuit pieces formed on the surface of the ceramic board and removeirregularities resulting from the conductor circuits, thereby making thesurface flat. The openings may be made by a laser.

[0197] (8) Next, the resin layer surface is subjected to modificationtreatment such as oxygen plasma treatment. Since hydroxyl groups areformed on the surface, adhesion thereof to metal is improved.

[0198] Next, chromium, copper and the like is sputtered. The thicknessof the sputtering layer is preferably from 0.1 to 5 μm. Next, a platingresist is formed by photolithography, and then a Cu or Ni layer isformed by electroplating. The thickness thereof is desirably from 2 to10 μm.

[0199] Thereafter, the plating resist is stripped, and etching isperformed, thereby dissolving and removing the conductor layer used tobe beneath the plating resist. Thus, a conductor circuit 48 having thevia holes 46 is formed (reference to FIG. 8(d)).

[0200] Thereafter, by repeating the above-mentioned steps (6) to (8), aprobe card is manufactured, wherein interlaminar resin insulating layers44, 144, 244 and 49 and conductor circuits 48, 148 and 248 (includingthe via holes 46, 146 and 246) are laminated and formed on the ceramicboard (reference to FIG. 8(e)). When conductor circuit and the resinlayer are formed on the ceramic board, the conductor circuit (resinlayer) may be formed as a monolayer, or as a two or more layers asillustrated in FIG. 8.

[0201] Incidentally, in the via holes 46 as illustrated in FIG. 8(d),the conductor layers having substantially the same thickness are formedalong the openings for the via holes. It is however allowable to makethe so-called filled vias having a flat shape, wherein metal issubstantially filled into the openings for the via holes and the upperfaces of the via holes 46 are at a level substantially equivalent to thelevel of the conductor circuits 48.

[0202] When a ceramic board is manufactured, the following manufacturingprocess (hereinafter referred to as the manufacturing process B) may beadopted besides the above-mentioned manufacturing process.

[0203] (1) If necessary, a sintering aid such as yttria, a binder and soon are blended with the above-mentioned nitride ceramic or carbideceramic powder, to prepare a slurry. Thereafter, this slurry is madeinto a granular form by spray-drying and the like. The granule is putinto a mold and pressed to be formed into a plate form and the likeform. Thus, a raw formed body (green) is formed.

[0204] Next, the raw formed body is pre-fired at a temperature of 600 to1600° C., to make through holes, which will be conductor-filled throughholes, with a drill and the like.

[0205] (2) Step of printing a conductor containing paste on thesubstrate

[0206] A conductor containing paste is generally a fluid comprisingmetal particles, an electrically conductive paste or a mixture thereof;a resin; and a solvent, and has a high viscosity. This conductorcontaining paste is printed on conductor circuit portions andconductor-filled through hole portions by screen printing and the like,to form a conductor containing paste layer and conductor-filled throughholes.

[0207] The conductor circuits may be formed after the end of thesintering step (3), which will be described below.

[0208] (3) Next, this pre-fired body is heated and fired to be sintered.In this way, a plate made of the ceramic is manufactured. Thereafter, byworking the plate into a desired shape, a substrate is manufactured. Theraw formed body may be made to have such a shape that the body afterfiring can be used as it is. By heating and firing the formed body underpressure, a substrate having no pores can be manufactured. It is enoughif the heating and firing is performed at the sintering temperature orhigher. The temperature is from 1000 to 2500° C. for nitride ceramics orcarbide ceramics.

BEST MODES FOR CARRYING OUT THE INVENTION

[0209] The following will describe the present invention in more detailby way of Examples. The present invention is not however limited tothese examples.

EXAMPLE 1 Manufacture of a Probe Card (Reference to FIG. 8)

[0210] (1) The following paste was used to conduct formation by a doctorblade method, to obtain green sheets 400 having a thickness of 0.47 mm:a paste obtained by mixing 100 parts by weight of aluminum nitridepowder (made by Tokuyama Corp., average particle diameter: 1.1 μm), 4parts by weight of yttria (Y₂O₃, average particle diameter: 0.4 μm),11.5 parts by weight of an acrylic binder, 0.5 part by weight of adispersant and 53 parts by weight of alcohols composed of 1-butanol andethanol.

[0211] (2) Next, the green sheets 400 were dried at 80° C. for 5 hours,and subsequently through holes, which would be conductor-filled throughholes 41, and so on were made by punching.

[0212] (3) The following were mixed to prepare a conductor containingpaste A: 100 parts by weight of tungsten carbide particles having anaverage particle diameter of 1 μm, 3.0 parts by weight of an acrylicbinder, 3.5 parts by weight of α-terpineol solvent, and 0.3 part byweight of a dispersant.

[0213] The following were mixed to prepare a conductor containing pasteB: 100 parts by weight of tungsten particles having an average particlediameter of 3 μm, 1.9 parts by weight of an acrylic binder, 3.7 parts byweight of α-terpineol solvent, and 0.2 part by weight of a dispersant.

[0214] This conductor containing paste B was filled into the portionswhich would be conductor-filled through holes, so as to form a filledlayer 410.

[0215] Twenty seven of the green sheets 400 subjected to theabove-mentioned processing were laminated and pressed at 130° C. and apressure of 8 MPa (reference to FIG. 8(a)).

[0216] (4) Next, the resultant lamination was degreased at 600° C. inthe atmosphere of nitrogen gas for 5 hours and hot-pressed at 1890° C.and a pressure of 15 MPa for 10 hours to obtain an aluminum nitridesintered body having a thickness of 5 mm. This was cut off into asquare, one side of which had a length of 60 mm, to prepare a ceramicboard 42 having therein conductor-filled through holes 41 in a circularcolumn form, which had a diameter of 200 μm.

[0217] (5) A sputtering equipment (CFS-RP-100 made by Tokuda SeisakusyoCo.) was used to sputter Ti, Mo and Ni in this order, so as to havethicknesses of 0.1 μm, 2.0 μm and 1.0 μm, respectively, on both surfacesof the ceramic board 42.

[0218] Furthermore, a resist was laminated thereon, and then exposed tolight and developed to prepare an etching resist.

[0219] The resultant was subjected to etching treatment with an aqueousHF/HNO₃ solution having a temperature of 55° C., to form a conductorcircuit 43 made of the Ti layer, the Mo layer and the Ni layer(reference to FIG. 8(b)).

[0220] (6) The ceramic board 42 was subjected to heating treatment,preparing for the coating, at 120° C. for 30 minutes.

[0221] Next, photosensitive polyimide (I-8802B made by Asahi ChemicalIndustry Co., Ltd.) was applied to the entire surface with a spincoater. The polyimide was heated and dried at 80° C. for 20 minutes, andthen heated and cured at 350° C., to form a polyimide layer.Irregularities between the conductor circuit pieces were removed to makethe surface flat.

[0222] (7) Furthermore, photosensitive polyimide (I-8802B made by AsahiChemical Industry Co., Ltd.) was applied thereto with a spin coater. Thepolyimide was heated and dried at 80° C. for 20 minutes, and then a maskwas placed thereon. The polyimide was exposed to light at 200 mJ, anddeveloped with dimethyleneglycol diethyl ether (DMDG).

[0223] Furthermore, the polyimide was heated and post-baked at 350° C.to cure the imide layer.

[0224] (8) The same processing as in the step (7) was carried out toform an interlaminar resin insulating layer 44 made of polyimide (hereinafter referred to as the polyimide layer) having a thickness of 10 μm(reference to FIG. 8(c)). Openings for via holes, having a diameter of100 μm, were made in this polyimide layer 44.

[0225] (9) The surface of the polyimide layer was treated with oxygenplasma. Furthermore, the surface was washed with 10% sulfuric acid.

[0226] (10) Next, the above-mentioned sputtering equipment was used toform a Cr layer of 0.1 μm thickness and a copper layer of 0.5 μmthickness in this order.

[0227] (11) Next, a resist film was laminated thereon, and exposed tolight and developed to form a plating resist.

[0228] (12) Furthermore, a copper electroplating bath comprising 80 g/Lof copper sulfate and 180 g/L of sulfuric acid and a nickelelectroplating bath comprising 100 g/L of nickel sulfamic acid were usedto subject the resultant to electroplating at a current density of 1A/dm². In this way, a conductor wherein the thickness of copper was 5.5μm and the thickness of Ni was 1 μm was formed.

[0229] (13) Furthermore, the plating resist was removed, and the Cr andCu layers were removed with an aqueous solution of hydrochloricacid/water=2/1 (40° C.), so as to form a conductor circuit 48 containingvia holes 46 (reference to FIG. 8(d)).

[0230] Furthermore, by repeating the steps (6) to (13), polyimide layers144 and 244 as upper layers were formed, and conductor circuits 148 and248 including via holes 146 and 246 were formed thereon. A polyimidelayer 49 having openings 49 a was formed thereon (reference to FIG.8(e)).

[0231] (14) The resin surface was masked with a film to which anadhesive agent was applied, and subsequently a non-oxidizable metal film(not illustrated) composed of a Ni layer of 5 μm thickness and a Aulayer of 0.03 μm thickness was formed, using a nickel electrolessplating bath having a pH of 4.5 and consisting of 2.31×10⁻² mol/L ofnickel chloride, 2.84×10⁻² mol/L of sodium hypophosphite and 1.55×10⁻²mol/L of sodium citrate, and a gold plating bath comprising 7.61×10⁻³mol/L of gold potassium cyanide, 1.87×10⁻¹ mol/L of ammonium chloride,1.16×10⁻¹ mol/L of sodium citrate and 1.70×10⁻¹ mol/L of sodiumhypophosphite, respectively.

[0232] In this probe card, the first and third layers were ground layersand the second layer was a signal layer.

EXAMPLE 2 Manufacture of a Probe Card

[0233] (1) A composition made of 100 parts by weight of aluminum nitridepowder (made by Tokuyama Corp., average particle diameter: 1.1 μm), 4parts by weight of yttria (Y₂O₃, average particle diameter: 0.4 μm), 12parts by weight of an acrylic binder, and an alcohol was spray-dried toproduce granular powder.

[0234] (2) Next, this granular powder was put into a mold and formedinto a flat plate form, thereby yielding a raw formed body (green) Thisraw formed body was pre-fired at 1400° C. The formed body subjected tothis treatment was drilled to make through holes for conductor-filledthrough holes. The insides thereof were filled with the conductorcontaining paste B used in Example 1.

[0235] (3) The formed body subjected to the above-mentioned steps wascut off into a square, one side of which had a length of 60 mm, toprepare a ceramic board having therein conductor-filled through holes ina circular column form, which had a diameter of 200 μm.

[0236] (4) The sputtering equipment (CFS-RP-100 made by TokudaSeisakusyo Co.) was used to sputter Ti, Mo and Ni in this order, so asto have thicknesses of 0.1 μm, 2.0 μm and 1.0 μm, respectively, on bothsurfaces of the ceramic board.

[0237] Furthermore, a resist was laminated thereon, and then exposed tolight and developed to prepare an etching resist.

[0238] The resultant was subjected to etching treatment with an aqueousHF/HNO₃ solution having a temperature of 55° C., to form a conductorcircuit made of the Ti layer, the Mo layer and the Ni layer.

[0239] (5) Next, a solution of a photosensitive cardo type polymerhaving a viscosity beforehand adjusted into 30 Pa·s was applied to thewhole of one main face of the ceramic board by spin-coating. Thereafter,by drying the solution at a temperature of 150° C. for 20 minutes, aresin layer made of a half-cured film of the photosensitive cardo typepolvmer was formed.

[0240] The photosensitive cardo type polymer was a random copolymerobtained by reacting the bis-phenol fluorine hydroxyacrylate representedby the chemical formula (1) with bis-aniline fluorene of theabove-mentioned general formula (3) wherein R², R³, R⁴, R⁵ and R⁶ werehydrogen atoms, and pyromellitic dianhydride at a molar ratio of 1:4:5,respectively.

[0241] Next, a photo etching mask wherein black circles were drawn inportions corresponding to openings for via holes was placed on the resinlayer 440 made of the photosensitive cardo type polymer, andsubsequently ultraviolet rays were applied thereto under a condition of400 mj/cm², thereby performing exposure and development. In this way,openings for via holes were formed. Thereafter, the polymer wassubjected to regular curing at 250° C. for 120 minutes, to form aninterlaminar resin insulating layer. The thickness of the interlaminarresin insulating layer formed herein was 10 μm. The glass transitiontemperature of the interlaminar resin insulating layer was 260° C.

[0242] Thereafter, the surface of the interlaminar resin insulatinglayer was subjected to oxygen plasma treatment. The surface was thenwashed with 10% sulfuric acid.

[0243] (6) Next, the above-mentioned sputtering equipment was used toform a Cr layer of 0.1 μm thickness and a copper layer of 0.5 μmthickness in this order.

[0244] Next, a resist film was laminated thereon, and exposed to lightand developed to form a plating resist.

[0245] (7) Next, copper electroplating was performed, using theabove-mentioned thin film conductor layer as a plating lead, under thefollowing conditions, so as to form a copper electroplating layer onportions where the plating resist was not formed.

[0246] [Copper Electroplating Solution] Sulfuric acid 2.24 mol/L Coppersulfate 0.26 mol/L Additive (Caparacide HL, made by 19.5 mL/L AtotchJapan K.K.)

[0247] [Electroplating Conditions] Current density  1 A/dm² Time 65minutes Temperature 22° C. ± 2° C.

[0248] (8) Furthermore, a nickel electroplating bath containing 100 g/Lof nickel sulfamic acid was used to perform electroplating at a currentdensity of 1 A/dm² to form a conductor made of copper of 5.5 μmthickness and Ni of 1 μm thickness.

[0249] (9) Furthermore, the plating resist was removed and the Cr and Culayers were removed with an aqueous solution of hydrochloricacid/water=2/1 (40° C.), to form a conductor circuit including terminalpads (50 μm□) and via holes.

[0250] (10) Next, by repeating the steps described in the steps (5) to(9) , an interlaminar resin insulating layer and a conductor circuit(including via holes), as higher layers, were formed. Subsequently, byrepeating the step described in the above-mentioned step (5), a topmostresin layer having openings was formed.

[0251] (13) Next, the resin surface was masked with a film to which anadhesive agent was applied, and subsequently a non-oxidizable metal film(not illustrated) composed of a Ni layer of 5 μm thickness and a Aulayer of 0.03 μm thickness was formed, using a nickel electrolessplating bath having a pH of 4.5 and comprising 2.31×10⁻² mol/L of nickelchloride, 2.84×10⁻² mol/L of sodium hypophosphite and 1.55×10⁻² mol/L ofsodium citrate, and a gold plating bath comprising 7.61×10⁻³ mol/L ofgold potassium cyanide, 1.87×10⁻¹ mol/L of ammonium chloride, 1.16×10⁻¹mol/L of sodium citrate and 1.70×10⁻¹ mol/L of sodium hypophosphite,respectively. In this way, a probe card was obtained. In this probecard, the first and third layers were ground layers and the second layerwas a signal layer.

EXAMPLE 3

[0252] (1) A composition made of 100 parts by weight of SiC powder(average particle diameter: 0.5 μm), 0.5 part by weight of C (averageparticle diameter: 0.4 μm), 12 parts by weight of an acrylic resinbinder, and an alcohol was spray-dried to produce granular powder.

[0253] (2) The granular powder was put into a mold and formed into aflat plate form, thereby yielding a raw formed body (green). This rawformed body was sintered at 1900° C. under a pressure of 20 MPa, toyield a ceramic board having a diameter of 310 mm.

[0254] Next, a glass paste (G-5177 made by Shoei Chemical Industry Co.,Ltd.) was applied to the surface, and the ceramic board was fired at700° C., to form a coating layer of 2 μm thickness on the surface.

[0255] (3) The sputtering equipment (CFS-RP-100 made by TokudaSeisakusyo Co.) was used to sputter Ti, Mo and Ni in this order, so asto have thicknesses of 0.1 μm, 2.0 μm and 1.0 μm, respectively, on bothsurfaces of the ceramic board.

[0256] Furthermore, a resist was laminated thereon, and then exposed tolight and developed to prepare an etching resist.

[0257] The resultant was subjected to etching treatment with an aqueousHF/HNO₃ solution having a temperature of 55° C., to form a conductorcircuit made of the Ti layer, the Mo layer and the Ni layer.

[0258] (4) Next, a solution of a photosensitive cardo type polymerhaving a viscosity beforehand adjusted into 30 Pa·s was applied to thewhole of a main face of the ceramic board by spin-coating. Thereafter,by drying the solution at a temperature of 150° C. for 20 minutes, aresin layer made of a half-cured film of the photosensitive cardo typepolymer was formed.

[0259] The photosensitive cardo type polymer used herein was a randomcopolymer obtained by reacting the bis-phenol fluorine hydroxyacrylaterepresented by the chemical formula (1) with bis-aniline fluorene of theabove-mentioned general formula (3) wherein R², R³, R⁴, R⁵ and R⁶ werehydrogen atoms, and pyromellitic dianhydride at a molar ratio of 1:4:5,respectively.

[0260] (5) Next, a photoetching mask wherein black circles were drawn inportions corresponding to openings for via holes was placed on the resinlayer 440 made of the above-mentioned photosensitive cardo type polymer,and subsequently ultraviolet rays were applied thereto under a conditionof 400 mj/cm², thereby performing exposure and development. In this way,openings for via holes were formed. Thereafter, the polymer wassubjected to regular curing at 250° C. for 120 minutes, to form aninterlaminar resin insulating layer. The thickness of the interlaminarresin insulating layer formed herein was 10 μm. The glass transitiontemperature of the interlaminar resin insulating layer was 260° C.

[0261] Thereafter, the surface of the interlaminar resin insulatinglayer was subjected to oxygen plasma. The surface was then washed with10% sulfuric acid.

[0262] (6) Next, the above-mentioned sputtering equipment was used toform a Cr layer of 0.1 μm thickness and a copper layer of 0.5 μmthickness in this order.

[0263] Next, a resist film was laminated thereon, and exposed to lightand developed to form a plating resist.

[0264] (7) Next, copper electroplating was performed, using theabove-mentioned thin film conductor layer as a plating lead, under thefollowing conditions, so as to form a copper electroplating layer onportions where the plating resist was not formed.

[0265] [Copper Electroplating Solution] Sulfuric acid 2.24 mol/L Coppersulfate 0.26 mol/L Additive (Caparacide HL, made by 19.5 mL/L AtotechJapan K.K.)

[0266] [Electroplating Conditions] Current density  1 A/dm² Time 65minutes Temperature 22° C. ± 2° C.

[0267] (8) Furthermore, a nickel electroplating bath containing 100 g/Lof nickel sulfamic acid was used to perform electroplating at a currentdensity of 1 A/dm² to form a conductor made of copper of 5.5 μmthickness and Ni of 1 μm thickness.

[0268] (9) Furthermore, the plating resist was removed and the Cr and Culayers were removed with an aqueous solution of hydrochloricacid/water=2/1 (40° C.), to form a conductor circuit including terminalpads (50 μm□) and via holes.

[0269] (10) Next, by repeating the steps described in the steps (5) to(9), an interlaminar resin insulating layer and a conductor circuit(including via holes), as higher layers, were formed. Subsequently, byrepeating the step described in the above-mentioned step (5), a topmostresin layer having openings was formed.

[0270] (11) Next, the resin surface was masked with a film to which anadhesive agent was applied, and subsequently a non-oxidizable metal film(not illustrated) composed of a Ni layer of 5 μm thickness and a Aulayer of 0.03 μm thickness was formed, using a nickel electrolessplating bath having a pH of 4.5 and comprising 2.31×10⁻² mol/L of nickelchloride, 2.84×10⁻² mol/L of sodium hypophosphite and 1.55×10⁻² mol/L ofsodium citrate, and a gold plating bath comprising 7.61×10⁻³ mol/L ofgold potassium cyanide, 1.87×10⁻¹ mol/L of ammonium chloride, 1.16×10⁻¹mol/L of sodium citrate and 1.70×10⁻¹ mol/L of sodium hypophosphite,respectively. In this way, a probe card was obtained.

[0271] (12) Furthermore, photosensitive polyimide was applied onto theconductor circuit including the pads, and the polyimide was exposed tolight and developed to make pad portions exposed. In this way, a probecard was manufactured.

[0272] In this probe card, the first and third layers were ground layersand the second layer was a signal layer.

Test Example 1

[0273] A paste obtained by mixing 100 parts by weight of alumina powder(average particle diameter: 1.0 μm), 11.5 parts by weight of an acrylicbinder, 0.5 part by weight of a dispersant and 53 parts by weight ofalcohols composed of 1-butanol and ethanol was used to conduct formationby a doctor blade method, to obtain green -sheets 400 having a thicknessof 0.47 mm. The green sheets were laminated and fired at 1600° C. tomanufacture a ceramic board having conductor-filled through holes.Furthermore, photosensitive polyimide was printed on the substrateexcept the periphery thereof. In the same way as in Example 1 except theabove-mentioned operation, a probe card was manufactured.

Comparative Example 1

[0274] (1) A paste obtained by mixing 100 parts by weight of aluminapowder (average particle diameter: 1.0 μm), 11.5 parts by weight of anacrylic binder, 0.5 part by weight of a dispersant and 53 parts byweight of alcohols composed of 1-butanol and ethanol was used to conductformation by a doctor blade method, to obtain green sheets 400 having athickness of 0.47 mm. The green sheets were laminated and then fired at1600° C. to manufacture a ceramic board having conductor-filled throughholes.

[0275] (2) The sputtering equipment (CFS-RP-100 made by TokudaSeisakusyo Co.) was used to sputter Ti, Mo and Ni in this order, so asto have thicknesses of 0.1 μm, 2.0 μm and 1.0 μm, respectively, on bothsurfaces of the ceramic board.

[0276] Furthermore, a resist was laminated thereon, and then exposed tolight and developed to prepare an etching resist.

[0277] The resultant was subjected to etching treatment with an aqueousHF/HNO₃ solution having a temperature of 55° C., to form a conductorcircuit made of the Ti layer, the Mo layer and the Ni layer.

[0278] Each of the probe cards according to Examples 1 to 3, TestExample 1 and Comparative Example 1 was set to the inspecting deviceillustrated in FIG. 1. One hundred silicon wafers which were beforehandjudged as acceptable products were used, and the temperature of thesilicon wafers was raised to 150° C. and subsequently the temperaturewas cooled to −50° C. This step was repeated to inspect the operatingcondition of integrated circuits formed in the silicon wafer.

[0279] In the inspecting device using each of the probe cards accordingto Examples 1 to 3, all of the products (silicone wafers) were judged asacceptable products even at high temperature or low temperature in theone hundred times inspections. Thus, it was demonstrated that thecontact of the probes 52 of the contactor substrate 50 with the exposedconductor circuit 248 of the probe card 40 was good even at hightemperature or low temperature. Accordingly, it is presumed that theinterlaminar resin insulating layers formed on the ceramic board 42expand and contract repeatedly at the same ratio, following thermalexpansion and contraction of the ceramic board 42.

[0280] On the other hand, in the probe cards according to Test Example 1and Comparative Example 1, the silicon wafers were judged asunacceptable products, and it was found that at high temperature theinspecting device made erroneous decisions at a high probability. It canbe considered that this results from the fact that the contact of theprobes 52 of the contactor substrate 50 with the exposed conductorcircuit of the probe card was poor at high temperature or lowtemperature because of a large thermal expansion coefficient of alumina.

[0281] A warp was generated in these probe cards. It is presumed thatthis is also one of causes for the poor contact. It is presumed that thegeneration of the warp resulted from the fact that the resin layer wasnot formed on the entire surface of the ceramic board.

[0282] Furthermore, Examples 1 to 3, Test Example 1 and ComparativeExample 1 were tested using signals having a high frequency band of 1GHz at 150° C. As a result thereof, in Examples 1 to 3, decisions couldbe made without any problem. In Test Example, no decision was able to bemade because of the warp. In Comparative Example 1, no measurement wasable to be made since the waveform of the signals was distorted.

Industrial Applicability

[0283] As described above, according to the present invention, a probecard is formed by laminating a resin thin film on a ceramic board;therefore, the thermal expansion coefficient of the probe card is equalto that of a silicon wafer. For this reason, at the time of heating orcooling the silicon wafer, the probe card contracts thermally in thesame way as the silicon wafer does. As a result, the probe does not slipoff from sites to be inspected of the silicon wafer, and an appropriateinspection can be made since no warp is generated. Additionally, thenumber of pads is easily increased and impedance matching is easilyattained; therefore, inspection using signals having a high frequencycan be performed.

What is claimed:
 1. An inspecting device comprising: a performancesubstrate provided with a terminal configured to perform an inspection;a contactor substrate provided with a probe configured to contact anobject to be inspected; and a probe card, wherein said probe cardcomprises a multi-layered substrate in which a resin thin film islaminated on a ceramic board.
 2. An inspecting device comprising: aperformance substrate provided with a terminal configured to perform aninspection; a contactor substrate provided with a probe configured tocontact an object to be inspected; and a probe card intervening betweensaid probe of said contactor substrate and said terminal of saidperformance substrate, wherein said probe card comprises a multi-layeredsubstrate in which a resin thin film is laminated on a ceramic board. 3.An inspecting device equipped with: a performance substrate providedwith a terminal configured to perform an inspection; a contactorsubstrate provided with a probe configured to contact an object to beinspected; and a probe card configured to be electrically connected tosaid probe of said contactor substrate, wherein said inspecting deviceis configured such that the object to be inspected is placed betweensaid performance substrate and said probe card, and wherein said probecard comprises a multi-layered substrate in which a resin thin film islaminated on a ceramic board.
 4. The inspecting device according toclaim 1, wherein the ceramic board of said probe card comprisesnon-oxide ceramic.
 5. The inspecting device according to claim 1,wherein said resin thin film comprises thermosetting resin.
 6. A probecard configured to be used to inspect integrated circuits formed on asemiconductor-wafer, comprising: a resin insulating layer and aconductor circuit serially formed in alternate fashion and in repetitionon a ceramic board.
 7. The probe card according to claim 6, wherein aconductor-filled through hole is formed in said ceramic board.
 8. Theprobe card according to claim 6, wherein resultant conductor circuitsformed through said resin layer are interconnected each other by a viahole.
 9. The probe card according to claim 6, wherein said ceramic boardcomprises non-oxide ceramic.
 10. The probe card according to claim 6,wherein said resin layer comprises thermosetting resin.
 11. The probecard according to claim 6, wherein said ceramic board has a disc shape.12. The probe card according to claim 6, wherein said resin layer isformed so as to cover a whole of at least one main face of said ceramicboard.